Resistive Switching Characteristics of Al/Si3N4/p-Si MIS-Based Resistive Switching Memory Devices

摘要

In this study, we proposed and demonstrated a self-rectifying property ofsilicon nitride (Si3N4)-based resistive random access memory device byemploying p-type silicon (p-Si) as bottom electrode. The RRAM devices consistedof Al/Si3N4/p-Si are fabricated by a low presure chemical vapor deposition andexhibited an intrinsic diode property with non-linear current-voltage (I-V)behavior. In addition, compared to conventional metal/insulator/metal (MIM)structure of Al/Si3N4/Ti RRAM cells, operating current in whole bias regionsfor proposed metal/insulator/semiconductor (MIS) cells has been dramaticallylowered because introduced p-Si bottom electrode efficiently suppresses thecurrent in both low and high resistive states. As a result, the results meanthat by employing p-Si as bottom electrode the Si3N4-based RRAM cells can beapplied to selector-free RRAM cells.